1n5400 thru 1n5408 general purpose silicon rectifier reverse voltage - 50 to 1000 volts forward current - 3.0 ampere characteristic case : jedec do-201ad molded plastic body t erminals : plated axial leads, solderable per mil-std-750, method 2026 polarity : color band denotes cathode end mounting position : any w eight :0.04 ounce, 1.10 grams the plastic package carries underwriters laboratory flammability classification 94v-0 construction utilizes void-free molded plastic technique low reverse leakage high forward surge current capability high temperature soldering guaranteed: 250 c/10 seconds,0.375 ? (9.5mm) lead length, 5 lbs. (2.3kg) tension fea tures mechanical data maximum ra tings and electrical characteristics 50 35 50 100 70 100 200 140 200 400 280 400 600 420 600 800 560 800 1000 700 1000 1n 5401 v v v symbols units a a v v rrm v rms v dc i (a v) i fsm v f 3.0 200 1.1 operating junction and storage temperature range maximum repetitive peak reverse voltage maximum rms voltage maximum dc blocking voltage maximum average forward rectified current 0.375?(9.5mm) lead length at t a =75 c peak forward surge current 8.3ms single half sine-wave superimposed on rated load (jedec method) maximum instantaneous forward voltage at 3.0a maximum dc reverse current t a =25 c at rated dc blocking voltage t a =100 c t ypical junction capacitance (note 1) note:1.measured at 1mhz and applied reverse voltage of 4.0v d.c. 2.thermal resistance from junction to ambient at 0.375 ?(9.5mm)lead length,p .c.b. mounted i r 5.0 100 c j t j , t stg 20.0 30.0 -65 to +150 pf c t ypical thermal resistance (note 2) c/w 1n 5400 1n 5402 1n 5404 1n 5407 1n 5406 1n 5408 ratings at 25 c ambient temperature unless otherwise specified. single phase half-wave 60hz,resistive or inductive load,for capacitive load current derate by 20%. 300 210 300 1n 5403 500 350 500 1n 5405 do-201ad 0.220 (5.6) 0.197(5.0) dia. 0.052 (1.3) 0.048 (1.2) dia. 0.375(9.5) 0.285(7.2) dimensions in inches and (millimeters) 1.0 (25.4) min. 1.0 (25.4) min. a r j a
1n5400 thru 1n5408 ra tings and characteristic cur ves 3.0 2.4 1.8 1.2 0.6 0 0 25 50 75 100 125 150 175 200 160 120 80 40 0 0.6 0.8 1.0 1.2 1.4 1.5 0.1 1.0 10 100 0.01 0.1 1 10 100 100 10 1 0.1 reverse voltage,vol ts t,pulse dura tion,sec. fig. 5-typical junction cap acit ance fig. 6-typical transient thermal impedance fig. 3-typical inst ant aneous for w ard characteristics number of cycles a t 60 hz fig. 2-maximum non-repetitive peak for w ard surge current fig. 1- for w ard current dera ting cur ve , t n e r r u c d e i f i t c e r d r a w r o f e g a r e v a s e r e p m a d r a w r o f s u o e n a t n a t s n i s e r e p m a , t n e r r u c f p , e c n a t i c a p a c n o i t c n u j , t n e r r u c e g r u s d r a w r o f k a e p s e r e p m a inst ant aneous for w ard voleage, vol ts single phase half w ave 60hz resistive or inductive load 1 10 100 8.3ms single half sine-w a ve (jedec method) 0.01 0.1 1 2 0 1 0 t j =25 c pulse width=300 m s 1%duty cycle t j =25 c 1 10 100 200 0 20 40 60 80 100 1,000 100 10 1 0.1 0.01 tj=100 c tj=25 c tj=150 c percent of peak reverse voltage,% fig. 4-typical reverse characteristics , t n e r r u c e s r e v e r s u o e n a t n a t s n i s e r e p m a o r c i m , e c n a d e p m i l a m r e h t t n e i s n a r t w / c ambient tempera ture, c
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